elektronische bauelemente SSD12P10 -12a , -100v , r ds(on) 210m ? p-channel enhancement mosfet 16-nov-2012 rev. c page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a c d n o p g e f h k j m b to-252(d-pack) 12p10 ???? ? rohs compliant product a suffix of ?-c? specifies halogen free description the SSD12P10 provide the designer with the best combination of fast switching, ruggedized dev ice design, low on-resistance and cost-effectiveness. the to-252 package is universally preferred for all commercial-industrial surface mount applications. features ? simple drive requirement ? lower on-resistance ? fast switching characteristic ? rohs compliant marking package information package mpq leader size to-252 2.5k 13 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds -100 v gate-source voltage v gs 20 v t c =25c -12 a continuous drain current @v gs =10v t c =100c i d -10 a pulsed drain current 1 i dm -48 a total power dissipation t c =25c p d 35.7 w operating junction and st orage temperature range t j , t stg -55~150 c thermal resistance rating maximum thermal resistance junction- case r jc 3.5 c / w maximum thermal resistance junction-ambient r ja 110 c / w date code millimete r millimete r ref. min. max. ref. min. max. a 6.35 6.80 j 2.30 ref. b 5.20 5.50 k 0.64 0.90 c 2.15 2.40 m 0.50 1.1 d 0.45 0.58 n 0.9 1.65 e 6.8 7.5 o 0 0.15 f 2.40 3.0 p 0.43 0.58 g 5.40 6.25 h 0.64 1.20 ? ? gate ? ? source ? ? drain
elektronische bauelemente SSD12P10 -12a , -100v , r ds(on) 210m ? p-channel enhancement mosfet 16-nov-2012 rev. c page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t j =25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions drain-source breakdown voltage bv dss -100 - - v v gs =0, i d = -250 a breakdown voltage temperature coefficient bv dss / t j - -0.096 - v/c reference to 25c, i d = -1ma gate-threshold voltage v gs(th) -1 - -2.5 v v ds =v gs , i d = -250 a forward transconductance g fs - 8 - s v ds = -10v, i d = -8a gate-source leakage current i gss - - 100 na v gs = 32v drain-source leakage current (t j =25c) - - -1 v ds = -100v, v gs =0 drain-source leakage current(t j =150c) i dss - - -25 a v ds = -80v, v gs =0 - - 210 v gs = -10v, i d = -8a static drain-source on-resistance 3 r ds(on) - - 250 m ? v gs = -4.5v, i d = -6a total gate charge 2 q g - 16 - gate-source charge q gs - 4.4 - gate-drain (?miller?) change q gd - 8.7 - nc i d = -8a v ds = -80v v gs = -4.5v turn-on delay time 2 t d(on) - 9 - rise time t r - 14 - turn-off delay time t d(off) - 45 - fall time t f - 40 - ns v ds = -50v i d = -8a v gs = -10v r g =3.3 ? r d =6.25 ? input capacitance c iss - 1590 - output capacitance c oss - 110 - reverse transfer capacitance c rss - 70 - pf v gs =0 v ds = -25v f =1.0mhz gate resistance rg - 8 12 ? f=1.0mhz source-drain diode forward on voltage 2 v sd - - -1.3 v i s = -12a, v gs =0 continuous source current(body diode) i s - - -12 a pulsed source current(body diode) 1 i sm - - -48 a v d =v g =0v, v s =1.3v notes: 1. pulse width limited by safe operating area. 2. pulse width Q 300us, duty cycle Q 2%.
elektronische bauelemente SSD12P10 -12a , -100v , r ds(on) 210m ? p-channel enhancement mosfet 16-nov-2012 rev. c page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves .
elektronische bauelemente SSD12P10 -12a , -100v , r ds(on) 210m ? p-channel enhancement mosfet 16-nov-2012 rev. c page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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